Ion current distribution on a substrate during nanostructure formation

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces

Charge Transfer and Nanostructure Formation During Electroless Etching of Silicon

Voltage waveform to achieve a desired ion energy distribution on a substrate in contact with plasma

A methodology is developed to determine the bias voltage waveform needed to achieve a desired (pre-selected) ion energy distribution (IED) on a substrate in contact with plasma. The approach is applicable to collisionless sheaths at all radio frequencies. It combines a circuit model with an equation for a ‘damped’ sheath potential to which ions respond. The methodology is demonstrated by comput...

Ion Current Simulation During the Post Flame Period in SI Engines

The application of ion current signals is one of the most recent approaches in engine management systems. By applying a small constant DC voltage across the electrodes of the spark plug and measuring the current through the electrode gap, the state of gas may be measured and investigated. In this paper a computer code is developed in order to analyze the state of gas during the combustion p...

The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

In pursuit of p-type doping, we have implanted GaN with Mg ions at 200 and 500 keV with the substrate temperature maintained at −150 cold or +300 °C hot during ion irradiation. The samples have been annealed at 1000 °C postion implantation. The radiation damage peak position and its profile , the dopant distribution, and the damage stability during annealing were all shown to be dependent upon ...